Analysis and Experiment of Nanosecond Pulse Circuit Based on Commercial Si-p-i-n Rectifier Diode
نویسندگان
چکیده
In this article, a nanosecond pulse generation circuit is designed and fabricated based on commercial Si-p-i-n rectifier diode using the DSRD principle. The composed of four parallel stacks with 3-kV output rise time less than 2 ns. Each stack contains diodes in series. working principle main parameters are analyzed by Pspice, simulation results consistent experimental results. Switching cutoff speed, reverse voltage, offset topological structure connecting affect amplitude pulse.
منابع مشابه
Sensitivity analysis and parameters calculation of PV solar panel based on empirical data and two-diode circuit model
In this paper, a simple algorithm based on a two-diode circuit model of the solar cell is proposed for calculating different parameters of PV panels. The input parameters required for this algorithm are available from datasheets of the standard PV modules. The values of series and parallel resistances, as well as the recombination factor of Diode 2, are estimated through an iterative solution p...
متن کاملfabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions
a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
Characterization of an Mg-implanted GaN p-i-n Diode
A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.
متن کاملNumerical Analysis of the Performance of p-i-n Diode Microwave Switches Based on Different Semiconductor Materials
A numerical analysis of the parameters of p-i-n diode microwave switches based on different semiconductor materials is presented. The Si, GaAs, 3C-SiC, 4H-SiC, 6H-SiC and GaN have been analyzed. The p-i-n diode parameters such as: series resistance, insertion loss and isolation have been studied. It is revealed that p-i-n diodes on the base of GaN permit to achieve the lowest value of junction ...
متن کاملA p-i-n junction diode based on locally doped carbon nanotube network.
A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained int...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Plasma Science
سال: 2022
ISSN: ['0093-3813', '1939-9375']
DOI: https://doi.org/10.1109/tps.2022.3188137